| 1 |
TCAD-enabled machine learning framework for DC and RF performance evaluation of InGaAs sub-channel DG-HEMTs |
The Journal of Engineering |
15-Oct-2024 |
/ / - |
Additional information
| Category |
Article in Research Journal |
| Sole Authored /Co Authored |
Co-Author |
| Author Name (s) |
RAMKUMAR K,LEEBAN MOSES M,SARAVANA KUMAR R,MUHAMMAD FAHEEM,SHOUKATH ALI K,ARFAT AHMAD KHAN |
| Title of Article |
TCAD-enabled machine learning framework for DC and RF performance evaluation of InGaAs sub-channel DG-HEMTs |
| Name of Journal |
The Journal of Engineering |
| Volume No |
|
| Issue No |
|
| Page No |
- |
| URL |
https://ietresearch.onlinelibrary.wiley.com/journal/20513305 |
| Date of Publication |
15-Oct-2024 |
|
| 2 |
Performance Analysis of Germanium-Silicon Vertical Tunnel Field-Effect Transistors (Ge-Si-VTFETs) for Analog/RF Applications |
Silicon |
12-Mar-2022 |
14 / / - |
Additional information
| Category |
Article in Research Journal |
| Sole Authored /Co Authored |
Co-Author |
| Author Name (s) |
RAMKUMAR K,V. N. RAMAKRISHNAN |
| Title of Article |
Performance Analysis of Germanium-Silicon Vertical Tunnel Field-Effect Transistors (Ge-Si-VTFETs) for Analog/RF Applications |
| Name of Journal |
Silicon |
| Volume No |
14 |
| Issue No |
|
| Page No |
- |
| URL |
https://link.springer.com/journal/12633 |
| Date of Publication |
12-Mar-2022 |
|
| 3 |
Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle
|
Journal of Computational Electronics |
03-Jan-2022 |
21 / / - |
Additional information
| Category |
Article in Research Journal |
| Sole Authored /Co Authored |
Co-Author |
| Author Name (s) |
RAMKUMAR K,C USHA,P VIMALA,V N RAMAKRISHNAN |
| Title of Article |
Electrostatic characteristics of a high-k stacked gate-all-around heterojunction tunnel field-effect transistor using the superposition principle
|
| Name of Journal |
Journal of Computational Electronics |
| Volume No |
21 |
| Issue No |
|
| Page No |
- |
| URL |
https://link.springer.com/journal/10825 |
| Date of Publication |
03-Jan-2022 |
|
| 4 |
Performance evaluation of gate engineered InAs Si heterojunction surrounding gate TFET |
Superlattices and Microstructures |
20-Nov-2021 |
162 / / - |
Additional information
| Category |
Article in Research Journal |
| Sole Authored /Co Authored |
Co-Author |
| Author Name (s) |
RAMKUMAR K,M SATHISHKUMAR,T S ARUNSAMUEL,I VIVEK ANAND,S B RAHI |
| Title of Article |
Performance evaluation of gate engineered InAs Si heterojunction surrounding gate TFET |
| Name of Journal |
Superlattices and Microstructures |
| Volume No |
162 |
| Issue No |
|
| Page No |
- |
| URL |
https://www.sciencedirect.com/journal/superlattices-and-microstructures |
| Date of Publication |
20-Nov-2021 |
|
| 5 |
Influence of trap carriers in SiO2/HfO2 stacked dielectric cylindrical gate tunnel fet |
Silicon |
09-Jul-2021 |
14 / / 4589-4600 |
Additional information
| Category |
Article in Research Journal |
| Sole Authored /Co Authored |
Co-Author |
| Author Name (s) |
RAMKUMAR K,I. VIVEK ANAND,T. S. ARUN SAMUEL,V. N. RAMAKRISHNAN |
| Title of Article |
Influence of trap carriers in SiO2/HfO2 stacked dielectric cylindrical gate tunnel fet |
| Name of Journal |
Silicon |
| Volume No |
14 |
| Issue No |
|
| Page No |
4589-4600 |
| URL |
https://link.springer.com/journal/12633 |
| Date of Publication |
09-Jul-2021 |
|
| 6 |
Pressure Sensors Using Si/ZnO Heterojunction Diode |
Silicon |
15-Jun-2021 |
14 / / 4121-4127 |
Additional information
| Category |
Article in Research Journal |
| Sole Authored /Co Authored |
Co-Author |
| Author Name (s) |
RAMKUMAR K,P. SUVEETHA DHANASELVAM,D. SRIRAM KUMAR,V. N. RAMAKRISHNAN,N. B. BALAMURUGAN |
| Title of Article |
Pressure Sensors Using Si/ZnO Heterojunction Diode |
| Name of Journal |
Silicon |
| Volume No |
14 |
| Issue No |
|
| Page No |
4121-4127 |
| URL |
https://link.springer.com/journal/12633 |
| Date of Publication |
15-Jun-2021 |
|
| 7 |
Investigation of Hetero Buried Oxide and Gate Dielectric PNPN Tunnel Field Effect Transistors |
Silicon |
24-Sep-2020 |
13 / / 4101-4108 |
Additional information
| Category |
Article in Research Journal |
| Sole Authored /Co Authored |
Co-Author |
| Author Name (s) |
RAMKUMAR K,V. N. RAMAKRISHNAN |
| Title of Article |
Investigation of Hetero Buried Oxide and Gate Dielectric PNPN Tunnel Field Effect Transistors |
| Name of Journal |
Silicon |
| Volume No |
13 |
| Issue No |
|
| Page No |
4101-4108 |
| URL |
https://link.springer.com/journal/12633 |
| Date of Publication |
24-Sep-2020 |
|
